Publication:
Gd and Tb doping effects on the physical properties of Nd2Sn2O7

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dc.contributor.authorYUMUŞAK, GÖRKEM
dc.contributor.authorsSaleh, Adli A.; Hamamera, Hanan Z.; Khanfar, Hazem K.; Qasrawi, A. F.; Yumusak, G.
dc.date.accessioned2022-03-12T22:26:39Z
dc.date.available2022-03-12T22:26:39Z
dc.date.issued2018
dc.description.abstractIn the current study, we report the light doping effects of the gadolinium and the terbium on the structural, morphological, optical and electrical properties of Nd2Sn2O7 pyrochlore ceramics. The pyrochlore which is prepared by the conventional solid state reaction technique is analyzed by means of scanning electron microscopy, energy dispersive X-ray analyzer, X-ray diffraction, ultraviolet- visible light spectrophotometry and temperature dependent current -voltage characteristics techniques. It is found that even though the doping content of both metals is low (2%), they significantly alter the physical properties of the pyrochlore. Particularly, it is observed that, these two doping agents increases the lattice parameter and strain and reduces the crystallite size and dislocation density. Optically, the effect of Gd doping on shrinking the energy band gap value of the Nd(2)Sn(2)O(7 )pyrochlore ceramic is more pronounced than that of Tb. On the other hand, the electrical investigations have shown that while the Gd make the pyrochlore exhibit p-type conductivity through forming shallow acceptor levels, the Tb forces n-type conductivity by forming deep donor levels below the conduction band edge. Such acceptor and donor impurity levels increases the electrical conductivity of the Nd(2)Sn(2)O(7 )pyrochlore ceramics by 390 and 58 times, respectively.
dc.identifier.doi10.1016/j.mssp.2018.08.017
dc.identifier.eissn1873-4081
dc.identifier.issn1369-8001
dc.identifier.urihttps://hdl.handle.net/11424/235096
dc.identifier.wosWOS:000443569500036
dc.language.isoeng
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectRare earth doping
dc.subjectLattice parameters
dc.subjectBand gap
dc.subjectConductivity
dc.subjectPYROCHLORE OXIDES
dc.subjectNANOSTRUCTURES
dc.subjectTA
dc.subjectNB
dc.subjectLN
dc.titleGd and Tb doping effects on the physical properties of Nd2Sn2O7
dc.typearticle
dspace.entity.typePublication
local.avesis.id7cc31669-4732-4154-a8b0-7784e8b27ec5
local.import.packageSS17
local.indexed.atWOS
local.indexed.atSCOPUS
local.journal.numberofpages6
local.journal.quartileQ2
oaire.citation.endPage261
oaire.citation.startPage256
oaire.citation.titleMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
oaire.citation.volume88
relation.isAuthorOfPublicationd3895ae9-4dad-4ca9-ad11-40b664bd060e
relation.isAuthorOfPublication.latestForDiscoveryd3895ae9-4dad-4ca9-ad11-40b664bd060e

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