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Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition

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dc.contributor.authorALEVLİ, MUSTAFA
dc.contributor.authorsAlevli, Mustafa; Ozgit, Cagla; Donmez, Inci; Biyikli, Necmi
dc.date.accessioned2022-03-14T10:16:48Z
dc.date.available2022-03-14T10:16:48Z
dc.date.issued2012-03
dc.description.abstractCrystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer deposition within the temperature range of 100 and 500 degrees C. The AlN films were characterized by x-ray diffraction, spectroscopic ellipsometry, Fourier transform infrared spectroscopy, optical absorption, and photoluminescence. The authors establish a relationship between growth temperature and optical properties and in addition, the refractive indices of the AlN films were determined to be larger than 1.9 within the 300-1000 nm wavelength range. Infrared reflectance spectra confirmed the presence of E-1(TO) and A(1)(LO) phonon modes at similar to 660 cm(-1) and 895 cm(-1), respectively. Analysis of the absorption spectroscopy show an optical band edge between 5.78 and 5.84 eV and the absorption and photoluminescence emission properties of the AlN layers revealed defect centers in the range of 250 and 300 nm at room temperature. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3687937]
dc.identifier.doi10.1116/1.3687937
dc.identifier.eissn1520-8559
dc.identifier.issn0734-2101
dc.identifier.urihttps://hdl.handle.net/11424/244296
dc.identifier.wosWOS:000301505100020
dc.language.isoeng
dc.publisherA V S AMER INST PHYSICS
dc.relation.ispartofJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleOptical properties of AlN thin films grown by plasma enhanced atomic layer deposition
dc.typearticle
dspace.entity.typePublication
local.avesis.id86582eb7-39b1-419f-b9d1-a8d3ab213c13
local.import.packageSS16
local.indexed.atWOS
local.indexed.atSCOPUS
local.journal.articlenumber21506
local.journal.numberofpages6
oaire.citation.issue2
oaire.citation.titleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
oaire.citation.volume30
relation.isAuthorOfPublication46e45b44-cc2c-4fcb-a8e7-cb6489c28796
relation.isAuthorOfPublication.latestForDiscovery46e45b44-cc2c-4fcb-a8e7-cb6489c28796

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