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High temperature thermopower of sol-gel processed Zn1-x-y Al (x) Me (y) O (Me: Ga, In)

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dc.contributor.authorDEMİRCİ, SELİM
dc.contributor.authorsKilinc, Enes; Demirci, Selim; Uysal, Fatih; Celik, Erdal; Kurt, Huseyin
dc.date.accessioned2022-03-12T22:23:42Z
dc.date.available2022-03-12T22:23:42Z
dc.date.issued2017
dc.description.abstractIn this study, dually doped samples of Zn1-x-y Al (x) Me (y) O (Me: Ga, In) were prepared by sol-gel process followed by hot isostatic pressing for high temperature thermoelectric applications. Material characterizations were performed with differential thermal analysis-thermogravimetry, Fourier transform infrared spectroscopy and X-ray diffraction on the target phases. Successful doping of the samples was confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray analysis. Thermopower values of the samples are found to be relatively high in analogy to semiconducting behavior in which negative values indicate electrons are the dominant charge carriers (n-type). Substitution of Zn2+ by Ga3+ and In3+ for Zn1-x-y Al (x) Me (y) O (Me: Ga, In) increases electron concentration in the samples and thereby decreases the thermopower values compared to Zn0.98Al0.02O. Considering the absolute values, In doped samples have higher thermopower (alpha (max) = -162 A mu V/K at 585 A degrees C for Zn0.96Al0.02In0.02O) compared to the Ga doped sample. Al and In dually doped Zn0.96Al0.02In0.02O could be considered as a promising n-type thermoelectric material for high temperature applications.
dc.identifier.doi10.1007/s10854-017-6982-7
dc.identifier.eissn1573-482X
dc.identifier.issn0957-4522
dc.identifier.urihttps://hdl.handle.net/11424/234524
dc.identifier.wosWOS:000406196200027
dc.language.isoeng
dc.publisherSPRINGER
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectTHERMOELECTRIC TRANSPORT-PROPERTIES
dc.subjectDOPED ZNO
dc.titleHigh temperature thermopower of sol-gel processed Zn1-x-y Al (x) Me (y) O (Me: Ga, In)
dc.typearticle
dspace.entity.typePublication
local.avesis.id5f451977-f0fc-44bb-8df2-b76a5932b566
local.import.packageSS17
local.indexed.atWOS
local.indexed.atSCOPUS
local.journal.numberofpages10
local.journal.quartileQ2
oaire.citation.endPage11778
oaire.citation.issue16
oaire.citation.startPage11769
oaire.citation.titleJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
oaire.citation.volume28
relation.isAuthorOfPublication391455e8-8240-46e8-a9fa-618b52b20ab3
relation.isAuthorOfPublication.latestForDiscovery391455e8-8240-46e8-a9fa-618b52b20ab3

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