Publication:
Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice

dc.contributor.authorYUMAK YAHŞİ, AYŞE
dc.contributor.authorsYumak, Aye; Turgut, Guven; Kamoun, Olfa; Ozisik, Haci; Deligoz, Engin; Petkova, Petya; Mimouni, Refka; Boubaker, Karem; Amlouk, Mosbah; Goumri-Said, Souraya
dc.date.accessioned2022-03-12T20:26:55Z
dc.date.accessioned2026-01-11T05:58:24Z
dc.date.available2022-03-12T20:26:55Z
dc.date.issued2015
dc.description.abstractIn this study, sol-gel spin coating route was carried out to prepare Scandium doped ZnO thin films with different controlled percentage (1-7%). Particularly, it has been demonstrated, through original conjoint morphological-structural and optical investigations, that some interesting physical properties were induced. Indeed, X-ray diffraction (XRD) analysis shows that (002) preferential crystalline plane for Sc doped ZnO films was kept along with ZnO hexagonal wurtzite structure, although Sc doping seemed to cause a decrease in crystallinity. Except for 1 at% Sc doping ratio, optical band gap changes reversely with Urbach energy with a decrease in optical gap and a broadening of the absorption tail. Ab-initio calculations of lattice dynamical properties outlined additional strong hybridization between Sc and O atoms and show the stability of Scandium doped ZnO. (C) 2015 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.mssp.2015.04.010
dc.identifier.eissn1873-4081
dc.identifier.issn1369-8001
dc.identifier.urihttps://hdl.handle.net/11424/233583
dc.identifier.wosWOS:000361774100016
dc.language.isoeng
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectZinc oxide
dc.subjectScandium
dc.subjectOptical properties
dc.subjectSingle oscillator model
dc.subjectUrbach tailing
dc.subjectDielectric constant
dc.subjectAmlouk-Boubaker opto-thermal
dc.subjectexpansivity psi(AB)
dc.subjectSI/AL HETEROJUNCTION DIODE
dc.subjectTOTAL-ENERGY CALCULATIONS
dc.subjectSNO2 THIN-FILMS
dc.subjectOPTICAL-PROPERTIES
dc.subjectSPATIAL EVOLUTION
dc.subjectAL-SC
dc.subjectTRANSPARENT
dc.subjectGROWTH
dc.subjectABSORPTION
dc.subjectFLUORINE
dc.titleStability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice
dc.typearticle
dspace.entity.typePublication
oaire.citation.endPage111
oaire.citation.startPage103
oaire.citation.titleMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
oaire.citation.volume39

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