Publication: Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice
| dc.contributor.author | YUMAK YAHŞİ, AYŞE | |
| dc.contributor.authors | Yumak, Aye; Turgut, Guven; Kamoun, Olfa; Ozisik, Haci; Deligoz, Engin; Petkova, Petya; Mimouni, Refka; Boubaker, Karem; Amlouk, Mosbah; Goumri-Said, Souraya | |
| dc.date.accessioned | 2022-03-12T20:26:55Z | |
| dc.date.accessioned | 2026-01-11T05:58:24Z | |
| dc.date.available | 2022-03-12T20:26:55Z | |
| dc.date.issued | 2015 | |
| dc.description.abstract | In this study, sol-gel spin coating route was carried out to prepare Scandium doped ZnO thin films with different controlled percentage (1-7%). Particularly, it has been demonstrated, through original conjoint morphological-structural and optical investigations, that some interesting physical properties were induced. Indeed, X-ray diffraction (XRD) analysis shows that (002) preferential crystalline plane for Sc doped ZnO films was kept along with ZnO hexagonal wurtzite structure, although Sc doping seemed to cause a decrease in crystallinity. Except for 1 at% Sc doping ratio, optical band gap changes reversely with Urbach energy with a decrease in optical gap and a broadening of the absorption tail. Ab-initio calculations of lattice dynamical properties outlined additional strong hybridization between Sc and O atoms and show the stability of Scandium doped ZnO. (C) 2015 Elsevier Ltd. All rights reserved. | |
| dc.identifier.doi | 10.1016/j.mssp.2015.04.010 | |
| dc.identifier.eissn | 1873-4081 | |
| dc.identifier.issn | 1369-8001 | |
| dc.identifier.uri | https://hdl.handle.net/11424/233583 | |
| dc.identifier.wos | WOS:000361774100016 | |
| dc.language.iso | eng | |
| dc.publisher | ELSEVIER SCI LTD | |
| dc.relation.ispartof | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.subject | Zinc oxide | |
| dc.subject | Scandium | |
| dc.subject | Optical properties | |
| dc.subject | Single oscillator model | |
| dc.subject | Urbach tailing | |
| dc.subject | Dielectric constant | |
| dc.subject | Amlouk-Boubaker opto-thermal | |
| dc.subject | expansivity psi(AB) | |
| dc.subject | SI/AL HETEROJUNCTION DIODE | |
| dc.subject | TOTAL-ENERGY CALCULATIONS | |
| dc.subject | SNO2 THIN-FILMS | |
| dc.subject | OPTICAL-PROPERTIES | |
| dc.subject | SPATIAL EVOLUTION | |
| dc.subject | AL-SC | |
| dc.subject | TRANSPARENT | |
| dc.subject | GROWTH | |
| dc.subject | ABSORPTION | |
| dc.subject | FLUORINE | |
| dc.title | Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice | |
| dc.type | article | |
| dspace.entity.type | Publication | |
| oaire.citation.endPage | 111 | |
| oaire.citation.startPage | 103 | |
| oaire.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | |
| oaire.citation.volume | 39 |
