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The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

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dc.contributor.authorsAlevli, M.; Ozgit, C.; Donmez, I.
dc.date.accessioned2022-03-12T16:13:42Z
dc.date.accessioned2026-01-11T19:04:05Z
dc.date.available2022-03-12T16:13:42Z
dc.date.issued2011
dc.description.abstractIn this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia (NH3) plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100 degrees C.
dc.identifier.doidoiWOS:000301171100018
dc.identifier.eissn1898-794X
dc.identifier.issn0587-4246
dc.identifier.urihttps://hdl.handle.net/11424/225026
dc.identifier.wosWOS:000301171100018
dc.language.isoeng
dc.publisherPOLISH ACAD SCIENCES INST PHYSICS
dc.relation.ispartofACTA PHYSICA POLONICA A
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectNITRIDE THIN-FILMS
dc.titleThe Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
dc.typeconferenceObject
dspace.entity.typePublication
oaire.citation.endPageA60
oaire.citation.issue6A
oaire.citation.startPageA58
oaire.citation.titleACTA PHYSICA POLONICA A
oaire.citation.volume120

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