Publication: Investigation of the production of tin sulfide (SnS) based solar cells
Abstract
Yenilenebilir ve sürdürülebilir enerjiler hayatımızda daha fazla önem kazanmaktadır.Dünyada güneş pilleri, rüzgâr türbinleri, biyokütle enerjisi ve diğer temiz enerjikaynakları hakkında birçok araştırma yayınlanmaktadır. Son yıllarda, SnS ince filmgüneş hücrelerinde fotovoltaik emici için cazip hale gelmiştir. SnS, kayda değerelektron ve boşluk hareketliliği ve uygun direkt bant boşluğu gibi çeşitli avantajlarasahiptir (Örn: 1.1-1.5 eV). Ayrıca düşük toksisiteye ve üretim kolaylığına sahiptir.Hammadde olarak kalay ve kükürt dünya üzerinde bolca bulunmaktadır. Bu çalışma,ince film SnS üretmek ve SnS'nin yapısal, morfolojik, optik ve foto-elektrokimyasalözelliklerini araştırmayı amaçlamaktadır.SnS iki farklı teknikle üretildi; bunlardan biri elektro-tabakalı Sn tabakasının farklısıcaklık ve zamanlardaki sülfürizasyondur ve bu tekniğin adı “2-adımlı Üretim” olarakbelirlenmiştir. Diğer bir üretim tekniğine, SnCl2 ve Na2S2O3.5H2O reaktifleri ile SnStabakalarının elektro-çökeltilmesi ve SnS ince film tabakalarının tavlanması olan 1-adımlı Üretim adı verildi. Tavlama atmosferleri, sıcaklıkları ve süreleri araştırıldı.Üretilen SnS ince filmler, X-ışını difraksiyon ölçümü (XRD) ile karakterize edildi vetüm örneklerde SnS'nin ana faz olduğu gözlendi. SnS ince filmlerinin morfolojiközellikleri saha emisyon taramalı elektron mikroskobu (FESEM) kullanılarakgerçekleştirildi ve farklı üretim yöntemlerinde üretilen farklı örneklerde farklı SnSyüzey yapıları gözlendi. Optik özellikler, biriktirilmiş SnS ince filmlerin doğrudan bantaralıklarının yaklaşık 1.6 eV'ye sahip olduğunu gösterdi. Tavlanmış numunelerin dahayüksek doğrudan bant aralıklarına sahip olduğu gözlendi.Farklı numuneler için asidik ve bazik elektrolit çözeltilerinde fotoelektrokimyasalölçümler yapıldı ve açık devre potansiyellerinin (Voc), karanlık ve aydınlık şartlarındakideğişim potansiyellerinin (Vph) ve SnS foto-elektrotlarının kısa devre akımlarının (Jsc)tavlama sonrası arttırıldığına dikkat çekildi. Ek olarak, tavlama atmosferinin SnS incefilminin Jsc'sini arttırmada çok önemli olduğu görülmüştür.
Renewable and sustainable energies gain more importance in our lives. Manyresearches are published around the world about solar cells, wind turbines, biomassenergy and other clean energy sources. Recently, SnS has become attractive forphotovoltaic absorber in thin film solar cells. SnS has several advantages such aspromising considerable electron and holes mobility and suitable direct band gap (Eg:1.1-1.5 eV). Also it has low toxicity and ease of production. Tin and sulphur which areused as resources are abundant at earth crust. This work is aimed to produce thin filmSnS and investigate the structural, morphological, optical and photo-electrochemicalproperties of SnS.SnS was produced by two different techniques; one of them is sulfurization in differenttemperatures and times of electrodeposited Sn layer and this technique was named “2-step Production”. Another production technique is called “1-step Production” whichwas electrodeposition of SnS layers using SnCl2 and Na2S2O3.5H2O reactants and postannealingof SnS thin film layers. Post annealing conditions were sought.Produced SnS thin films were characterized by X-ray diffraction measurement (XRD)and it was observed that SnS was main phase in all samples. Morphological propertiesof SnS thin films were carried out using field emission scanning electron microscope(FESEM) and different SnS surface structures were observed in different samples whichwere produced in different production methods. Optical properties indicated that directbandgaps of as-deposited SnS thin films had around 1.6 eV. Annealed samples havehigher direct bandgaps.Photoelectrochemical measurements were done in acidic and basic electrolyte solutionsfor different samples and it pointed out that open circuit potentials (Voc), the changepotentials under dark and luminous conditions (Vph) and short-circuit currents (Jsc) ofSnS photo-electrodes were increased by post annealing. Additionally, it was observedthat the atmosphere of annealing was crucial for increasing the Jsc of SnS thin film.
Renewable and sustainable energies gain more importance in our lives. Manyresearches are published around the world about solar cells, wind turbines, biomassenergy and other clean energy sources. Recently, SnS has become attractive forphotovoltaic absorber in thin film solar cells. SnS has several advantages such aspromising considerable electron and holes mobility and suitable direct band gap (Eg:1.1-1.5 eV). Also it has low toxicity and ease of production. Tin and sulphur which areused as resources are abundant at earth crust. This work is aimed to produce thin filmSnS and investigate the structural, morphological, optical and photo-electrochemicalproperties of SnS.SnS was produced by two different techniques; one of them is sulfurization in differenttemperatures and times of electrodeposited Sn layer and this technique was named “2-step Production”. Another production technique is called “1-step Production” whichwas electrodeposition of SnS layers using SnCl2 and Na2S2O3.5H2O reactants and postannealingof SnS thin film layers. Post annealing conditions were sought.Produced SnS thin films were characterized by X-ray diffraction measurement (XRD)and it was observed that SnS was main phase in all samples. Morphological propertiesof SnS thin films were carried out using field emission scanning electron microscope(FESEM) and different SnS surface structures were observed in different samples whichwere produced in different production methods. Optical properties indicated that directbandgaps of as-deposited SnS thin films had around 1.6 eV. Annealed samples havehigher direct bandgaps.Photoelectrochemical measurements were done in acidic and basic electrolyte solutionsfor different samples and it pointed out that open circuit potentials (Voc), the changepotentials under dark and luminous conditions (Vph) and short-circuit currents (Jsc) ofSnS photo-electrodes were increased by post annealing. Additionally, it was observedthat the atmosphere of annealing was crucial for increasing the Jsc of SnS thin film.