Publication:
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition

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dc.contributor.authorsHaider A., Kizir S., Deminskyi P., Tsymbalenko O., Leghari S.A., Biyikli N., Alevli M., Gungor N.
dc.date.accessioned2022-03-15T08:23:22Z
dc.date.accessioned2026-01-11T05:58:13Z
dc.date.available2022-03-15T08:23:22Z
dc.date.issued2016-04
dc.description.abstractGaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as trimethylgallium (TMG) and triethylgallium (TEG) on GaN growth and film quality is also investigated and reviewed. Films were characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometery, and grazing incidence X-ray diffraction. GaN film deposited by TMG revealed better structural, chemical, and optical properties in comparison with GaN film grown with TEG precursor. When compared on basis of different substrate temperature, GaN films grown at higher substrate temperature revealed better structural and optical properties. © 2016 IEEE.
dc.identifier.doi10.1109/ELNANO.2016.7493030
dc.identifier.isbn9781509014316
dc.identifier.urihttps://hdl.handle.net/11424/248377
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartof2016 IEEE 36th International Conference on Electronics and Nanotechnology, ELNANO 2016 - Conference Proceedings
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectAtomic layer deposition
dc.subjectGaN
dc.subjectLow temperature growth
dc.titleEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
dc.typeconferenceObject
dspace.entity.typePublication
oaire.citation.endPage134
oaire.citation.startPage132
oaire.citation.title2016 IEEE 36th International Conference on Electronics and Nanotechnology, ELNANO 2016 - Conference Proceedings

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