Publication:
Pure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope

dc.contributor.authorYUMAK YAHŞİ, AYŞE
dc.contributor.authorsBen Said, L.; Larbi, T.; Yumak, A.; Boubaker, K.; Amlouk, M.
dc.date.accessioned2022-03-12T20:26:33Z
dc.date.accessioned2026-01-10T20:30:01Z
dc.date.available2022-03-12T20:26:33Z
dc.date.issued2015
dc.description.abstractManganese(II,III) oxide Mn3O4 thin films have been deposited on glass substrates using a simple spray pyrolysis method. Zirconium doping protocol was applied in order to verify some recently claimed enhancements of hausmannite physical properties. Gradual doping was achieved with ratio [Zr]/[Mn] = 1%, 2% and 3% in addition to pure Mn3O4. Beyond classical characterization techniques, effects of Zr-doping were studied in reference to the expected use in rechargeable batteries and sensing devices. Moreover, additional opto-thermal investigation and analyses of the Lattice Compatibility Theory led to a founded understanding to the dynamics of Zirconium ion incorporation inside Mn3O4 host matrices. (C) 2015 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.mssp.2015.06.034
dc.identifier.eissn1873-4081
dc.identifier.issn1369-8001
dc.identifier.urihttps://hdl.handle.net/11424/233481
dc.identifier.wosWOS:000363344600031
dc.language.isoeng
dc.publisherELSEVIER SCI LTD
dc.relation.ispartofMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMn3O4
dc.subjectSpray pyrolysis
dc.subjectOptical constants
dc.subjectZirconium doping
dc.subjectLattice Compatibility Theory (LCT)
dc.subjectTHIN-FILMS
dc.subjectELECTRICAL-PROPERTIES
dc.subjectDIELECTRIC-PROPERTIES
dc.subjectSPATIAL EVOLUTION
dc.subjectEXPANSION
dc.subjectTEMPERATURE
dc.subjectPROTOCOL
dc.subjectMODEL
dc.titlePure and zirconium-doped manganese(II,III) oxide: Investigations on structural and conduction-related properties within the Lattice Compatibility Theory scope
dc.typearticle
dspace.entity.typePublication
oaire.citation.endPage229
oaire.citation.startPage224
oaire.citation.titleMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
oaire.citation.volume40

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