Publication:
Layered semiconductor GeS: A metamaterial with extremely low refractive index

Simple item page
dc.contributor.authorsOzturk A., Suleymanli R.
dc.date.accessioned2022-03-15T02:11:48Z
dc.date.accessioned2026-01-11T17:34:21Z
dc.date.available2022-03-15T02:11:48Z
dc.date.issued2016
dc.description.abstractReflection and transmission optical spectra of layered semiconductor GeS are investigated. It is shown, that this semiconductor can be considered as natural metamaterial with extremely low, n=0.14, refractive index in wide spectral region, λ=0.8-1.0 μm. © 2015 IEEE.
dc.identifier.doi10.1109/CLEOPR.2015.7376330
dc.identifier.isbn9781467371094
dc.identifier.urihttps://hdl.handle.net/11424/247697
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartof2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjecteffective refractive index
dc.subjectGeS
dc.subjectmetamaterial structure
dc.subjectperiodic layer
dc.subjectpropagation
dc.titleLayered semiconductor GeS: A metamaterial with extremely low refractive index
dc.typeconferenceObject
dspace.entity.typePublication
oaire.citation.title2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
oaire.citation.volume4

Files

Collections

Araştırma Çıktıları